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K. M. Chang, T. H. Yeh, I. C. Deng and C. W. Shih, “Amorphouslike Chemical Vapor Deposited Tungsten Diffusion Barrier for Copper Metallization and Effects of Nitrogen Addition,” Journal of Applied Physics, Vol. 82, No. 3, 1997, pp. 1469-1475. doi:10.1063/1.365925

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