Article citationsMore>>
Y. F. Wu, M. Moore, T. Wisleder, P. Chavarkar and P. Parikh, “Noise Characteristics of Field-Plated HEMTs,” International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, 2004, pp. 192-194.
doi:10.1142/S0129156404002880
has been cited by the following article:
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TITLE:
Efficient Time-Domain Signal and Noise FET Models for Millimetre-Wave Applications
AUTHORS:
Shahrooz Asadi, Mustapha C. E. Yagoub
KEYWORDS:
Distributed Model; FDTD; Noise Correlation Matrix; FET
JOURNAL NAME:
Journal of Electromagnetic Analysis and Applications,
Vol.5 No.1,
January
29,
2013
ABSTRACT:
Based on the
active coupled line concept, a novel approach for efficient signal and noise
modeling of millimeter-wave field-effect transistors is proposed. The
distributed model considers the effect of wave propagation along the device
electrodes, which can significantly affect the device performance especially in
the millimetre-wave range. By solving the multi-conductor transmission line
equations using the Finite-Difference Time-Domain technique, the proposed procedure
can accurately determine the signal and noise performance of the transistor. In
order to demonstrate the proposed FET model accuracy, a distributed low-noise amplifier
was designed and tested. A model selection is often a trade-off between
procedure complexity and response accuracy. Using the proposed distributed
model versus the circuit-based model will allow increasing the model frequency
range.