K. J. Yang and C. Hu, “MOS Capacitance Measurements for High Leakage Thin Dielectrics,” IEEE Transaction on Electron Devices, Vol. 46, No. 7, July 1997, pp. 1500- 1501.

has been cited by the following article:

• TITLE: Designing Parameters for RF CMOS Cells

  AUTHORS: Viranjay M. Srivastava, K. S. Yadav, G. Singh

  KEYWORDS: CMOS, Cell Library, Contact Resistance, DG MOSFET, DP4T Switch, Potential Barrier, Radio Frequency, RF Switch, Resistance of MOS, Voltage-Current Curve, VLSI

  JOURNAL NAME: Circuits and Systems, Vol.1 No.2, October 26, 2010

  ABSTRACT: In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.