TITLE:
Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si1-yNiy:H at Very Low Temperature with Magnetic Field
AUTHORS:
Abdelfattah Narjis, Abdelhamid El kaaouachi, Jamal Hemine, Abdelghani Sybous, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Buskipski
KEYWORDS:
Amorphous Silicon-Nickel Alloys a-Si1-yNiy:H; Variable Range Hopping Conductivity; Metal Insulator Transition; Positive Magnetoresistance
JOURNAL NAME:
Journal of Modern Physics,
Vol.3 No.6,
June
21,
2012
ABSTRACT: We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.