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Asubar, J.T., Yatabe, Z., Gregusova, D. and Hashizume, T. (2021) Controlling Surface/Interface States in GaN-Based Transistors: Surface Model, Insulated Gate, and Surface Passivation. Journal of Applied Physics, 129, Article No.121102.
https://doi.org/10.1063/5.0039564

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