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Swirhun, S.E., Kwark, Y.H. and Swanson, R.M. (1986) Measurement of Electron Lifetime, Electron Mobility and Band-Gap Narrowing in Heavily Doped P-Type Silicon. 1986 International Electron Devices Meeting, Los Angeles, 7-10 December 1986, 24-27.
https://doi.org/10.1109/IEDM.1986.191101

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