Gerlach, J.W., Sienz, S., Attenberger, W. and Rauschenbach, B. (2001) Influence of Defects in Low-Energy Nitrogen Ion Beam Assisted Gallium Nitride Thin Film Deposition. Physica B, 308-310, 81-84.
https://doi.org/10.1016/S0921-4526(01)00661-5

has been cited by the following article:

• TITLE: Structural Characterization of Thin Epitaxial GaN Films on Polymer Polyimides Substrates by Ion Beam Assisted Deposition

  AUTHORS: Sri Vidawati, Jürgen W. Gerlach, Benjamin Herold, Bernd Rauschenbach

  KEYWORDS: Ion Beam Assisted Deposition, Hexagonal GaN Thin Film, SEM, Quantum Design Physical Properties Measurement System, RHEED

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.10 No.9, September 27, 2020

  ABSTRACT: The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.