Chevalier, P., Schröter, M., Bolognesi, C.R., d’Alessandro, V., Alexandrova, M., Böck, J., et al. (2017) Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proceedings of the IEEE, 105, 1035-1050.
https://doi.org/10.1109/JPROC.2017.2669087

has been cited by the following article:

• TITLE: Design and Simulation of Improved SOI SiGe Hetero-Junction Bipolar Transistor Architecture with Strain Engineering

  AUTHORS: Naidan Miao, Peipei Liu, Jianhao Wen, Jinxi Wei, Baichuan Zhang, Shiqi Wang, Ruwen Zeng, Guanyu Wang, Chunyu Zhou

  KEYWORDS: Uniaxial Strain, SOI SiGe HBT, Electrical Performance, Frequency Performance

  JOURNAL NAME: Journal of Applied Mathematics and Physics, Vol.8 No.2, January 20, 2020

  ABSTRACT: In order to improve the electrical and frequency characteristics of SiGe heterojunction bipolar transistors (HBTs), a novel structure of SOI SiGe heterojunction bipolar transistor is designed in this work. Compared with traditional SOI SiGe HBT, the proposed device structure has smaller window widths of emitter and collector areas. Under the act of additional uniaxial stress induced by Si0.85Ge0.15, all the collector region, base region and emitter region are strained, which is beneficial to improve the performance of SiGe HBTs. Employing the SILVACOⓇ TCAD tools, the numerical simulation results show that the maximum current gain βmax, the Earley voltage VA are achieved for 1062 and 186 V, respectively, the product of β and VA, i.e., β ×VA, is 1.975 × 105 V and, the peak cutoff frequency fT is 419 GHz when the Ge component in the base has configured to be a trapezoidal distribution. The proposed SOI SiGe HBT architecture has a 52.9% improvement in cutoff frequency fT compared to the conventional SOI SiGe HBTs.