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https://doi.org/10.1002/pip.896

has been cited by the following article:

• TITLE: Base Doping Effects on the Efficiency of Vertical Parallel Junction Solar Cells

  AUTHORS: Almoustapha Samoura, Oumar Sakho, Omar Faye, Aboubaker Chedikh Beye

  KEYWORDS: Vertical Junction, Doping, Internal Quantum Efficiency (IQE)

  JOURNAL NAME: Open Journal of Applied Sciences, Vol.7 No.6, June 23, 2017

  ABSTRACT: In this work, we present a theoretical study of a vertical parallel junction silicon solar cell under monochromatic illumination. The internal quantum efficiency (IQE) and the photovoltaic conversion efficiency are calculated, taking into account the base doping density and illumination wave-length. The main purpose of this work is to show how conversion efficiency depends on internal quantum efficiency and the dependence of the later on the base doping density.