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Chen, C.-H., Keller, S., Haberer, E., Zhang, L.D., DenBaars, S.P., Hu, E.L., Mishra, U.K. and Wu, Y.F. (1999) Cl2 Reactive Ion Etching for Gate Recessing of AlGaN/GaN Field-Effect Transistors. Journal of Vacuum Science & Technology B: Microelectronics Processing, 17, 2755-2758.
http://dx.doi.org/10.1116/1.591058
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