N. Hasuike, K. Nishio, K. Kisoda, and H. Harima, “Room Temperature Growth of Al-Doped ZnO Thin Films by Reactive DC Sputtering Technique with Metallic Target,” Japanese Journal of Applied Physics, Vol. 52, 2013, Article ID: 01AC09.
http://dx.doi.org/10.7567/JJAP.52.01AC09

has been cited by the following article:

• TITLE: Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering

  AUTHORS: Erica Pereira da Silva, Michel Chaves, Gilvan Junior da Silva, Larissa Baldo de Arruda, Paulo Noronha Lisboa-Filho, Steven Frederick Durrant, José Roberto Ribeiro Bortoleto

  KEYWORDS: ZnO Thin Films; Surface Morphology; RF Magnetron Sputtering

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.12, December 6, 2013

  ABSTRACT: Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm-3 to 2.6 × 1019 cm-3. The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.