SCIRP Mobile Website
Paper Submission

Why Us? >>

  • - Open Access
  • - Peer-reviewed
  • - Rapid publication
  • - Lifetime hosting
  • - Free indexing service
  • - Free promotion service
  • - More citations
  • - Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.

 

Contact Us >>

WhatsApp  +86 18163351462(WhatsApp)
   
Paper Publishing WeChat
Book Publishing WeChat
(or Email:book@scirp.org)

Article citations

More>>

Madougou, S., Made, F., Boukary, M.S. and Sissoko, G. (2007) Advanced Materials Research, 18-19, 303-312.

has been cited by the following article:

  • TITLE: Irradiation Energy Effect on a Silicon Solar Cell: Maximum Power Point Determination

    AUTHORS: Mamadou Lamine Ba, Hawa Ly Diallo, Hamet Yoro Ba, Youssou Traore, Ibrahima Diatta, Marcel Sitor Diouf, Mamadou Wade, Gregoire Sissoko

    KEYWORDS: Silicon Solar Cell, Irradiation, Electrical Parameters, Maximum Power Point

    JOURNAL NAME: Journal of Modern Physics, Vol.9 No.12, October 11, 2018

    ABSTRACT: The aim of this study is to determinate the electrical parameters of a white biased silicon solar cell submitted to an irradiation energy of particles (protons, helium, electrons and heavy ions). A theoretical study of the influence of irradiation energy on the photocurrent density, the photovoltage, the maximum power, as well as the maximum efficiency of the solar cell is presented through a resolution of the continuity equation relative to excess minority carrier. Then the expressions of the photocurrent density Jph, the photovoltage Vph, and the excess minority carrier recombination velocity at the back side Sb are established dependent of irradiation parameters ∅p, Kl respectively irradiation flux and intensity. In this work, we propose a method for determining the recombination velocity of the excess minority carrier at the junction Sfmax corresponding to the maximum power point delivered by the photovoltaic generator under the influence of the irradiation. It is then obtained by calculating the derivative of the power with respect to the excess minority carrier recombination velocity Sf at the junction emitter-base. A transcendental equation solution is deduced as eigenvalue, leading to the junction recombination velocity of excess minority carrier and also yields the solar cell maximum conversion efficiency.