Article citationsMore>>
Fukata, N., Sato, K., Mitome, M., Bando, Y., Sekiguchi, T., Kirkham, M., Hong, J.-I., Wang, Z.L. and Snyder, R.L. (2010) Doping and Raman Characterization of Boron and Phosphorus Atoms in Germanium Nanowires. ACS Nano, 4, 3807-3816.
https://doi.org/10.1021/nn100734e
has been cited by the following article:
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TITLE:
The Larger Grain and (111)-Orientation Planes of Poly-Ge Thin Film Grown on SiO2 Substrate by Al-Induced Crystallization
AUTHORS:
Shaoguang Dong, Junhuo Zhuang, Yaguang Zeng
KEYWORDS:
Al-Induced Crystallization, Poly-Ge Thin Film, Diffusion Control Interlayer, Lower Annealing Temperature
JOURNAL NAME:
Journal of Materials Science and Chemical Engineering,
Vol.6 No.2,
February
13,
2018
ABSTRACT: Al-induced crystallization yields the larger grain and (111)-orientation planes of poly-Ge thin film grown on SiO2 substrate, the (111)-orientation planes of poly-Ge thin film grown on SiO2 substrate are very important for the superior performance electronics and solar cells. We discussed the 50 nm thickness poly-Ge thin film grown on SiO2 substrate by Alinduced crystallization focusing on the lower annealing temperature and the diffusion control interlayer between Ge and Al thin film. The (111)-orientation planes ratio of poly-Ge thin film achieve as high as 90% by merging the lower annealing temperature (325℃) and the GeOx diffusion control interlayer. Moreover, we find the lack of defects on poly-Ge thin film surface and the larger average grains size of poly-Ge thin film over 12 μm were demonstrated by electron backscatter diffraction measurement. Our results turn on the feasibility of fabricating electronic and optical device with poly-Ge thin film grown on SiO2 substrate.
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