TITLE:
Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface
AUTHORS:
Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Naoto Utsuyama, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa
KEYWORDS:
Strained Si, SiGe(110), Stress-Induced Twin, Transmission Electron Microscopy
JOURNAL NAME:
Journal of Materials Science and Chemical Engineering,
Vol.6 No.1,
January
5,
2018
ABSTRACT: Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also observe microstructure of the identical position using cross-sectional transmission electron microscopy. These results reveal that crossing of stress-induced twins causes remarkable surface roughness. We propose using vicinal substrate to avoid this phenomenon and our successive experimental results are shown in this paper.