Kuan, T.S. and Iyer, S.S. (1991) Strain Relaxation and Ordering in SiGe Layers Grown on (100), (111), and (110) Si Surfaces by Molecular-Beam Epitaxy. Appl. Phys. Lett., 59, 2242. https://doi.org/10.1063/1.106083

has been cited by the following article:

• TITLE: Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface

  AUTHORS: Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Naoto Utsuyama, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa

  KEYWORDS: Strained Si, SiGe(110), Stress-Induced Twin, Transmission Electron Microscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.6 No.1, January 5, 2018

  ABSTRACT: Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observe surface morphology of Si/SiGe/Si(110) using scanning electron microscopy and we also observe microstructure of the identical position using cross-sectional transmission electron microscopy. These results reveal that crossing of stress-induced twins causes remarkable surface roughness. We propose using vicinal substrate to avoid this phenomenon and our successive experimental results are shown in this paper.