Kessler, J., Ruckl, M., Harriskos, D. and Ruthle Schow, U. (2013) Interface Engineering between CuInSe2 and ZnO. Processing of the 23rd IEEE Photovoltaic Specialist Conference, Louisville, 16-21 June 2013, 447-452.

has been cited by the following article:

• TITLE: Numerical Simulation of Varied Buffer Layer of Solar Cells Based on Cigs

  AUTHORS: Sampson Oladapo Oyedele, Boko Aka

  KEYWORDS: Numerical Simulation, CIGS Solar Cell, SCAPS-1D, Buffer Layer, Efficiency

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.7 No.3, July 30, 2017

  ABSTRACT: Numerical simulation has been used to investigate the effect of different bufferlayer components on the performance of CuInGaSe2solar cellswith SCAPS-1Dsoftware. The main photovoltaic parameters of simulated devices: open-circuitvoltage (Voc), short-circuit current (Jsc), fill factor (FF), and conversion efficiency (h),areanalysed as a function of thickness and temperature in the different buffer layers used. According to numerical simulation the highest conversionefficiency (23%) of CIGS solar cell is reached for the CdS buffer layer. Thisresult is validated by experimental results(20%). At 300 K, when the thicknessofthe buffer layer (CdS, ZnS, ZnSe,InSe2) increases from 100 nm to 500nm,with the other parameters maintained constant, the efficiency decreases. When the temperature increases from 300 K to 400 K,with the other parameters maintainedconstant, both open circuit voltage and conversion efficiency also decrease.Theeffect of dual buffer layers of ZnS/CdS has also been analysed and his efficiency increasesof 3% than a single buffer CdS.