TITLE:
28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II
AUTHORS:
Ali Mohsen, Adnan Harb, Nathalie Deltimple, Abraham Serhane
KEYWORDS:
UTBB FD-SOI: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator, Tri-Gate FinFET, DIBL: Drain Induced Barrier Lowering
JOURNAL NAME:
Circuits and Systems,
Vol.8 No.5,
May
19,
2017
ABSTRACT: This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is going fully depleted and its size is becoming much smaller, 28-nm and above. Reliability tests of those alternatives are first discussed. Then, a comparison is made between the two alternative transistors comparing their physical properties, electrical properties, and their preferences in different applications.