SCIRP Mobile Website
Paper Submission

Why Us? >>

  • - Open Access
  • - Peer-reviewed
  • - Rapid publication
  • - Lifetime hosting
  • - Free indexing service
  • - Free promotion service
  • - More citations
  • - Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.


Contact Us >>

Article citations


Villegas, M., Caballero, A.C., Moure, C., Duran, P. and Fernandez, J.F. (1999) Factros Affecting The Electrical Conductivity of Donor-Doped Bi4Ti3O12 PiezoelectricCeramics. Journal of the American Ceramic Society, 82, 2411-2416.

has been cited by the following article:

  • TITLE: Enhanced Ferroelectric Properties of Multilayer SBT-BTN Thin Films for NVRAM Applications

    AUTHORS: Oleksandr Khorkhordin, Chia-Pin Yeh, Bodo Kalkofen, Edmund Burte

    KEYWORDS: Ferroelectric, SBT, BTN, MOCVD, Multilayer

    JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.5 No.4, September 30, 2015

    ABSTRACT: Ferroelectric SrBi2Ta2O9-(Bi4Ti3)1-xNbxO12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C4H9)3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)5(OC2H4OMe)]2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)2(mmp)2] and Niob-ethoxide [Nb(OC2H5)5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800oC consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization () and coercive field (Ec) are 16.2 μC/cm2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (= 6.4 μC/cm2, Ec = 154 kV/cm). In the films prepared above 700oC, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.