Characterization of ZnO Thin Films Grown by SILAR Method

A. Raidou¹, F. Benmalek¹, T. Sall¹, M. Aggour¹, A. Qachaou¹, L. Laanab², M. Fahoume¹

¹L.P.M.C., Faculty of Science, Ibn Tofail University, Kénitra, Morocco.
²L.C.S., Faculty of Science, Mohammed V University, Rabat, Morocco.

DOI: 10.4236/oalib.1100588                

Abstract

Zinc oxide (ZnO) thin films have been deposited using a SILAR (Successive Ionic Layer Adsorption and Reaction) technique, which is based on the alternate dipping of substrate in the solution and distilled water. The thin films were grown on copper, silicon and glass substrates. The precursors for ZnO films were diluted aqueous solution ZnSO₄ complexed with NH₃. The films were investigated by X-ray diffraction, scanning electron microscopy, XPS spectroscopy and spectrophotometer. XRD measurement showed that the films were crystallized in the wurtzite phase type with preferred orientation (002). X-ray photoelectron spectroscopy (XPS) was used to monitor changes in oxidation state of ZnO thin films. The XPS peaks of the O_1s, Zn_2p3/2 and Zn_2p1/2 were used for studding the ZnO film. The results of influence of different parameters of SILAR method on phase structure, surface morphology, and optical properties are studied and discussed.

Keywords

ZnO, Substrates Effect, Thin Films, Optical Properties

Conflicts of Interest

The authors declare no conflicts of interest.

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