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Photoluminescence Properties of Thulium and Cerium Co-Doped Tantalum-Oxide Films Prepared by Radio-Frequency Co-Sputtering

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DOI: 10.4236/msa.2015.64031    2,552 Downloads   2,941 Views   Citations

ABSTRACT

We prepared thulium and cerium co-doped tantalum-oxide (Ta2O5 :Tm, Ce) thin films by radiofrequency co-sputtering of Tm2O3 and CeO2 pellets on a Ta2O5 disc for the first time, and photoluminescence (PL) properties of the films annealed at 700°C, 800°C, 900°C, or 1000°C for 20 min were evaluated. PL peaks around a wavelength of 800 nm due to Tm3+ were observed for films annealed at 900°C or 1000°C. The peak intensities of films prepared using one Tm2O3 pellet and one CeO2 pellet were much stronger than those of films prepared using one Tm2O3 pellet and two CeO2 pellets or films prepared using two Tm2O3 pellets and one CeO2 pellet. To obtain the strongest PL intensity from the film, the proper Tm concentration was estimated to be around 1.0 mol%, and the proper Ce concentration was estimated to be around 1.3 mol%. Such Ta2O5:Tm, Ce co-sputtered thin films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel light-emitting devices, and they will also be used as anti-reflection and downconversion layers for realizing high-efficiency silicon solar cells.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Miura, K. , Osawa, T. , Yokota, Y. , Suzuki, T. and Hanaizumi, O. (2015) Photoluminescence Properties of Thulium and Cerium Co-Doped Tantalum-Oxide Films Prepared by Radio-Frequency Co-Sputtering. Materials Sciences and Applications, 6, 263-268. doi: 10.4236/msa.2015.64031.

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