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Effect on Defect in N or F-Doped Ferromagnetic Zn1-xCuxO: First-Principles Study

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DOI: 10.4236/msa.2014.514102    2,647 Downloads   3,050 Views  

ABSTRACT

We investigated the electronic and magnetic properties for O or Zn defect of (Cu, N) or (Cu, F)-co- doped ZnO with the concentration of 2.77% - 8.33% by using the first-principles calculations. The ferromagnetic coupling of Cu atoms in (Cu, N)-codoped ZnO can be attributed to the hole-mediated double-exchange through the strong 2p-3d coupling between Cu and neighboring O (or N) atoms. The ferromagnetism in Cu-doped ZnO is controllable by changing the carrier density. The Cu magnetic moment in low Cu concentration (2.77%) is increased by the N-doping, while for the F-doping it decreases. For two Cu atoms of Zn0.9445Cu0.0555O with O vacancy, the antiferromagnetic state is more energetically favorable than the ferromagnetic state.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Kang, B. , Chae, K. and Lee, H. (2014) Effect on Defect in N or F-Doped Ferromagnetic Zn1-xCuxO: First-Principles Study. Materials Sciences and Applications, 5, 1004-1010. doi: 10.4236/msa.2014.514102.

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