return new ActiveXObject('Microsoft.XMLHTTP'); } ) || null; }, post: function (sUrl, sArgs, bAsync, fCallBack, errmsg) { var xhrj = this.init(); xhrj.onreadystatechange = function () { if (xhrj.readyState == 4) { if (xhrj.responseText) { if (fCallBack.constructor == Function) { fCallBack(xhrj); } } else { } } }; xhrj.open('POST', encodeURI(sUrl), bAsync); xhrj.setRequestHeader('Content-Type', 'application/x-www-form-urlencoded'); xhrj.send(sArgs); }, get: function (sUrl, bAsync, fCallBack, errmsg) { var xhrj = this.init(); xhrj.onreadystatechange = function () { if (xhrj.readyState == 4) { if (xhrj.responseText) { if (fCallBack.constructor == Function) { fCallBack(xhrj); } } else { } } }; xhrj.open('GET', encodeURI(sUrl), bAsync); xhrj.send('Null'); } } function RndNum(n) { var rnd = ""; for (var i = 0; i < n; i++) rnd += Math.floor(Math.random() * 10); return rnd; } function SetNum(item) { var url = "//www.scirp.org/journal/senddownloadnum.aspx"; var args = "paperid=" + item; url = url + "?" + args + "&rand=" + RndNum(4); window.setTimeout("show('" + url + "')", 3000); } function show(url) { var callback = function (xhrj) { } ajaxj.get(url, true, callback, "try"); } // function SetNumTwo(item) { // alert("jinlia"); // var url = "../userInformation/PDFLogin.aspx"; // var refererrurl = document.referrer; // var downloadurl = window.location.href; // var args = "PaperID=" + item + "&RefererUrl=" + refererrurl + "&DownloadUrl="+downloadurl; // url = url + "?" + args + "&rand=" + RndNum(4); // //// window.setTimeout("show('" + url + "')", 500); // } // function pdfdownloadjudge() { // $("a").each(function(index) { // var rel = $(this).attr("rel"); // if (rel == "true") { // $(this).removeAttr("onclick"); // $(this).attr("href","#"); // //$(this).bind('click', function() { SetNumTwo(2566)}); // var url = "../userInformation/PDFLogin.aspx"; // var refererrurl = document.referrer; // var downloadurl = window.location.href; // var args = "PaperID=" + 2566 + "&RefererUrl=" + refererrurl + "&DownloadUrl=" + downloadurl; // url = url + "?" + args + "&rand=" + RndNum(4); // // $(this).bind('click', function() { ShowTwo(url)}); // } // }); // } // //获取下载pdf注册的cookie // function getcookie() { // var cookieName = "pdfddcookie"; // var cookieValue = null; //返回cookie的value值 // if (document.cookie != null && document.cookie != '') { // var cookies = document.cookie.split(';'); //将获得的所有cookie切割成数组 // for (var i = 0; i < cookies.length; i++) { // var cookie = cookies[i]; //得到某下标的cookies数组 // if (cookie.substring(0, cookieName.length + 2).trim() == cookieName.trim() + "=") {//如果存在该cookie的话就将cookie的值拿出来 // cookieValue = cookie.substring(cookieName.length + 2, cookie.length); // break // } // } // } // if (cookieValue != "" && cookieValue != null) {//如果存在指定的cookie值 // return false; // } // else { // // return true; // } // } // function ShowTwo(webUrl){ // alert("22"); // $.funkyUI({url:webUrl,css:{width:"600",height:"500"}}); // } //window.onload = pdfdownloadjudge;
ENG> Vol.2 No.8, August 2010
Share This Article:
Cite This Paper >>

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Abstract Full-Text HTML Download Download as PDF (Size:431KB) PP. 617-624
DOI: 10.4236/eng.2010.28079    8,020 Downloads   15,763 Views   Citations
Author(s)    Leave a comment
Chao Liu, Yanbo Li, Yiping Zeng

Affiliation(s)

.

ABSTRACT

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

KEYWORDS

Antimonide Based Compound Semiconductors (ABCS), IR Laser, IR Detector, Integrated Circuit, Functional Device

Cite this paper

C. Liu, Y. Li and Y. Zeng, "Progress in Antimonide Based III-V Compound Semiconductors and Devices," Engineering, Vol. 2 No. 8, 2010, pp. 617-624. doi: 10.4236/eng.2010.28079.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] [1] B. R. Bennett, R. Magno, J. B. Boos, et al., “Antimo-nide-Based Compound Semiconductors for Electronic Devices: A Review,” Solid-State Electronics, Vol. 49, No. 12, 2005, pp. 1875-1895.
[2] M. Razeghi, “Overview of Antimonide Based III-V Semiconductor Epitaxial Layers and Their Applications at the Center for Quantum Devic-es,” The European Physical Journal Applied Physics, Vol. 23, No. 3, 2003, pp. 149-205.
[3] A. H. Kroemer, “The 6.1 ? family (InAs, GaSb, AlSb) and its Heterostructures: a Selective Review,” Physica E, Vol. 20, No. 3-4, 2004, pp. 196-203.
[4] R. M. Biefeld, “The Metal-Organic Chemical Vapor Deposition and Properties of III-V An-timony-Based Semiconductor Materials,” Materials Science and Engineering R, Vol. 36, No. 4, 2002, pp. 105-142.
[5] C. A. Wang, “Progress and Continuing Challenges in Gasb-Based III-V Alloys and Heterostruc-tures Grown by Organometallic Vapor-Phase Epitaxy,” Journal of Crystal Growth, Vol. 272, No. 1-4, 2004, pp. 664-681.
[6] A. Rogalshi, “Material Considerations for Third Generation Infrared Photon Detectors,” Infrared Physics & Technology, Vol. 50, No. 2-3, 2007, pp. 240-252.
[7] O. Nesher and P. C. Klipstein, “High-Performance IR Detectors at SCD Present and Fu-ture,” Opto-Electronics Review, Vol. 14, No. 1, 2006, pp. 61-70.
[8] M. G. Mauk and V. M. Andreev, “Gasb-Related Materials for TPV Cells,” Semiconductor Science and Technology, Vol. 18, No. 5, 2003, pp. S191-S201.
[9] M. Rosker and J. Shah, “DARPA’s Program on Antimonide Based Compound Semiconduc-tors (ABCS),” IEEE GaAs Digest, 2003, p. 293.
[10] H. Toyota, T. Sasaki and Y. Jinbo, “Growth and Characteri-zation of Gasb/Algasb Multi-Quantum Well Structures on Si (0 0 1) Substrates,” Journal of Crystal Growth, Vol. 310, No. 1, 2008, pp. 78-82.
[11] K. Zaima, R. Hasimoto, M. Ezaki, et al., “Dislocation Reduction of Gasb on Gaas by Metalorganic Chemical Vapor Deposition with Epi-taxial Lateral Overgrowth,” Journal of Crystal Growth, Vol. 310, No. 23, 2008, pp. 4843-4845.
[12] T. Ashley, L. Buckle,G. W. Smith, et al., ”Dilute Antimonide Ni-trides for Very Long Wavelength Infrared Applications,” Proceedings of SPIE, Orlando, 17 May 2006, pp. 62060L.
[13] P. H. Jefferson, L. Buckle , B. R. Bennett, et al., “Growth of Dilute Nitride Alloys of Gainsb Lat-tice-Matched to Gasb,” Journal of Crystal Growth, Vol. 304, No. 2, 2007, pp. 338-341.
[14] D. Jackrel, A. Ptak, B. Seth, et al., “Gainnassb Solar Cells Grown by Mole-cular Beam Epitaxy,” IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, 2006, pp. 783-786.
[15] J. B. Hacker, J. Bergman, G. Nagy, et al., “An Ultra- Low Power Inas/Alsb HEMT W-Band Low-Noise Amplifier,” IEEE MTT-S International Mi-crowave Symposium, June 2005, pp. 1029-1032.
[16] M. K. Kwang, H. S. Jung, E. K. Dong, et al., “The Growth of a Low Defect Inas HEMT Structure on Si by Using an Algasb Buffer Layer Containing Insb Quantum Dots for Dislocation Termination,” Nanotechnology, Vol. 20, No. 22, 2009, p. 225201.
[17] A. Rogalski. “New Material Systems for Third Generation Infrared Photo Detectors,” Opto-Electron Review, Vol. 16, No. 4, 2008, pp. 458-482.
[18] M. Walther, R. Rehm, J. Schmitz, et al., “Antimony- Based Superlattices for High-Performance Infrared Imag- ers,” Proceedings of SPIE, Orlandoof, 17 March 2008, pp. 69400A-69400A-8.
[19] E. Corbin, M. J. Shaw, M. R. Kitchin, et al., “Systematic Study of Type II Ga1?Xinxsb/Inas Superlattices for Infra-Red Detection in the 10-12 ΜM Wavelength Range,” Semiconductor Science and Technology, Vol. 16, No. 4, 2001, pp. 263-272.
[20] C. J. Hill, J. V. Li, J. M. Mumolo, et al., “MBE Grown Type-II MWIR and LWIR Superlattice Photodiodes,” Infrared Physics & Technology, Vol. 50, No. 2-3, 2007, pp. 187-190.
[21] E. H. Aifer, J. G. Tischler, J. H. Warner, et al., “Dual Band LWIR/VLWIR Type-II Superlattice Photodiodes,” Proceedings of SPIE, Orlando, 28 March 2005, Vol. 5783, pp. 112-122.
[22] M. Münzberg, R. Breiter, W. Cabanski, et al., “Inas/Gasb Type-II Short-Period Superlattices for Advanced Single And Dual-Color Focal Plane Arrays,” Proceedings of SPIE, Orlando, 9 April 2007, Vol. 6542, p. 654206.
[23] Y. G. Zhang, Y. L. Zheng, C. Lin, et al., “Continuous Wave Performance and Tunability of MBE Grown 2.1 μM Ingaassb/Algaassb MQW Lasers,” Chinese Physics Letters, Vol. 23, No. 8, 2006, pp. 2262-2265.
[24] A. Bauer, F. Langer, M. Dallner, et al., “Emission Wavelength Tuning of Interband Cascade Lasers in the 3-4 μM Spectral Range,” Applied Physics Letters, Vol. 95, No. 25, 2009, p. 251103.
[25] W. W. Bewley, J. R. Lindle, C. S. Kim, et al., “Lifetimes and Auger Coefficients in Type-II W Interband Cascade Las-ers,” Applied Physics Letters, Vol. 93, No. 4, 2008, p. 041118.
[26] N. Yamamoto, “Next-Generation Optical Communications through Nanotechnology,” NICT News, Vol. 353, 2005, pp. 3-4.
[27] C. J. Hill and R. Q. Yang, “MBE Growth Optimization of Sb-Based Interband Cas-cade Lasers,” Journal of Crystal Growth, Vol. 278, No. 1-4, 2005, pp. 167-172.
[28] A. H?rk?nen, M. Guina, O. Okhotnikov,et al., “1-W Antimonide-Based Vertical Ex-ternal Cavity Surface Emitting Laser Operating At 2-ΜM,” Optics Express, Vol.14, No. 14, 2006, pp. 6479-6484.
[29] A. Ducanchez, L. Cerutti, P. Grech, et al., “Room Temperature Continuous Wave Operation of Electrically-Inje- cted Sb-Based RC-LED Emitting Near 2.3 ΜM,” Superlattices and Microstructures, Vol. 44, No. 1, 2008, pp. 62-69.

  
comments powered by Disqus
ENG Subscription
E-Mail Alert
ENG Most popular papers
Publication Ethics & OA Statement
ENG News
Frequently Asked Questions
Recommend to Peers
Recommend to Library
Contact Us

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.