Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

Abstract Full-Text HTML XML Download Download as PDF (Size:1061KB) PP. 69-73
DOI: 10.4236/jmp.2012.31010    6,012 Downloads   12,878 Views   Citations

ABSTRACT

The ZrO2 thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO2 films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO2/Si Systems.

Cite this paper

V. Chinchamalatpure, S. Chore, S. Patil and G. Chaudhari, "Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)," Journal of Modern Physics, Vol. 3 No. 1, 2012, pp. 69-73. doi: 10.4236/jmp.2012.31010.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] K. J. Hubbard and D. G. Schlom, “Thermodynamic Stability of Binary Oxides in Contact with Silicon,” Journal of Material Research, Vol. 11, No. 11, 1996, pp. 2757- 2776. doi:10.1557/JMR.1996.0350
[2] R. Puthenkovilakam and J. P. Chang, “Valence Band Structure and Band Alignment at the ZrO2/Si Interface,” Applied Physics Letters, Vol. 84, No. 8, 2004, pp. 1353- 1355. doi:10.1063/1.1650547
[3] J. Robertson, “Band Offsets of Wide-Band-Gap Oxides and Implications for Future Electronic Devices,” Journal of Vacuum Science Technology, Vol. B 18, 2000, p. 1785.
[4] K. S. Krisch, J. D. Bude and L. Manchanda, “Gate Capacitance Attenuation in MOS Devices with Thin Gate Dielectrics,” IEEE Electron Device Letter, Vol. 17, No. 11, 1996, pp. 521-524. doi:10.1109/55.541768
[5] S. Chatterjeea, S. K. Samantaa, H. D. Banerjeeb and C. K. Maiti, “Electrical Properties of Stacked Gate Dielectric (SiO2/ZrO2) Deposited on Strained SiGe Layers,” Thin Solid Films, Vol. 422, No. 1-2, 2002, pp. 33-38. doi:10.1016/S0040-6090(02)00995-1
[6] Y. S. Lin, R. Puthenkovilakam, J. P. Chang, C. Bouldin, I. Levin, N. V. Nguyen, J. Ehrstein, Y. Sun, P. Pianetta, T. Conard, W. Vandervorst, V. Venturo and S. Selbrede, “Interfacial Properties of ZrO2 on Silicon,” Journal of Applied Physics, Vol. 93, No. 10, 2003, pp. 5945-5952.
[7] R. Mahapatra, J. H. Lee, S. Maikap, G. S. Kar, A. Dhar, N.-M. H. Wang, D. Y. Kim, B. K. Mathur and S. K. Rayc, “Electrical and Interfacial Characteristics of Ultra-Thin ZrO2 Gate Dielectrics on Strain Compensated SiGeC/Si Heterostructure,” Applied Physics Letters, Vol. 82, No. 14, 2003, pp. 2320-2327. doi:10.1063/1.1566480
[8] S. Harasek, A. Lugstein, H. D. Wanzenboeck and E. Bertagnolli, “Slow Trap Response of Zirconium Dioxide Thin Films on Silicon,” Applied Physics Letters, Vol. 83, No. 7, 2003, p. 1400. doi:10.1063/1.1602577
[9] A. Stesmans and V. V. Afanas’ev, “Si Dangling- Bond-Type Defects at the Interface of Si(100) with Ultrathin Layers of SiOx, Al2O3, and ZrO2,” Applied Physics Letters, Vol. 80, No. 11, 2002, pp. 1957-1959. doi:10.1063/1.1448169
[10] J. M. Howard, V. Craciun, C. Essary and R. K. Singh, “Interfacial Layer Formation during High-Temperature Annealing of ZrO2 Thin Films on Si,” Applied Physics Letters, Vol. 81, No. 18, 2002, pp. 3431-3433. doi:10.1063/1.1517407
[11] N. Sriprang, D. Kaewchina and J. D. Kennedy, “Processing and Sol Chemistry of a Triol-Based Sol-Gel Route for Preparing Lead Zirconate Titanate Thin Films,” Journal of American Ceramic Society, Vol. 83, No. 8, 2000, pp. 1914-1920.
[12] X. R. Huang and Z. T. Huang, “Preparation of Asymmetric Alumina Membrane by Sol-Gel Techniques,” Journal of Inorganic Material, Vol. 13, No. 4, 1998, p. 534.
[13] L. Q. Zhu, Q. Fang, G. He and M. Liu, “Interfacial and Optical Properties of ZrO2/Si by Reactive Magnetron Sputtering,” Material Letter, Vol. 60, No. 7, 2006, pp. 888-891. doi:10.1016/j.matlet.2005.10.039
[14] S. Dhar and M. S. Dharmaprakash, “MOCVD of ZrO2 Films from Bis(t-Butyl-3-oxo-butanoato) Zirconium (IV): Some Therotical (Thermodynamics) and Experimental Aspects,” Material Science, Vol. 31, 2008, pp. 67-72.
[15] J. Zhu and Z. G. Liu, “Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High-k gate Dielectric Application Prepared by Pulsed Laser Deposition,” Applied Physics, Vol. 78, No. 5, 2004, pp. 741-744. doi:10.1007/s00339-002-2025-0
[16] S. J. Wang and C. K. Ong, “Rapid Thermal Annealing Effect on Crystalline Yttria-Stabilized Zirconia Gate Dielectrics,” Semiconductor Science and Technology, Vol. 18, No. 2, 2003, pp. 154-157. doi:10.1088/0268-1242/18/2/316
[17] T. S. Jeeon, J. M. White and D. I. Kwong, “Thermal Stability of Ultrathin ZrO2 Film on Si(100),” Applied Physics Letter, Vol. 78, No. 3, 2001, p. 368. doi:10.1063/1.1339994

  
comments powered by Disqus

Copyright © 2020 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.