Author(s)

Baba Wague¹, Nicolas Baboux², Pedro Rojo Romeo¹, Yves Robach¹, Bertrand Vilquin¹

¹Université de Lyon, Ecole Centrale de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR, Ecully Cedex, France.
²Université de Lyon, INSA de Lyon, Institut des Nanotechnologies de Lyon, CNRS UMR, Villeurbanne Cedex, France.

The properties of BaTiO₃ (BTO) thin films deposited on different substrates by RF magnetron sputtering were investigated. Two representative substrates were selected and different heterostructures were studied. 1) SrTiO₃ (STO) single crystals as a bulk oxide reference material, and 2) silicon as a semiconductor. SrRuO₃ (SRO) and Pt bottom electrodes were deposited on the silicon substrate. The BTO structural characterizations show that all the films have (001) crystallographic orientation. We have compared the electrical properties of the different samples: the same dielectric constant and polarization values were obtained independently of the nature of the substrate.

Ferroelectric, Barium Titanate, Thin Film, Silicon, Sputtering, Epitaxy

Wague, B. , Baboux, N. , Romeo, P. , Robach, Y. and Vilquin, B. (2020) Comparison of Epitaxial and Textured Ferroelectric BaTiO₃ Thin Films. Journal of Modern Physics, 11, 509-516. doi: 10.4236/jmp.2020.114033.