Author(s)

Abdelfattah Narjis, Abdelhamid El kaaouachi, Jamal Hemine, Abdelghani Sybous, Lhoussine Limouny, Said Dlimi, Rachid Abdia, Gerard Buskipski

Laboratoire de Physique de la Matière Condensée, Département de Physique, Faculté des Sciences et Techniques de Mohammadia, Mohammedia, Morocco.
Laboratoire de Spectroscopie Hertzienne LSH, Université de LilleI, Villeneuve d’Ascq Cedex, France.
Research Group ESNPS, Physics Department, Faculty of Sciences, University Ibn Zohr, Agadir, Morocco.

We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si_1-yNi_y:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T ^-1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.

Amorphous Silicon-Nickel Alloys a-Si_1-yNi_y:H; Variable Range Hopping Conductivity; Metal Insulator Transition; Positive Magnetoresistance

A. Narjis, A. kaaouachi, J. Hemine, A. Sybous, L. Limouny, S. Dlimi, R. Abdia and G. Buskipski, "Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si_1-yNiy:H at Very Low Temperature with Magnetic Field," Journal of Modern Physics, Vol. 3 No. 6, 2012, pp. 447-450. doi: 10.4236/jmp.2012.36061.