Author(s)

Ramatou Konate^1,2*, Bernard Zouma¹, Bruno Korgo¹, Aboubacar Savadogo¹, Cyrile Constant Moyenga¹, Issa Zerbo¹

¹Département de Physique, Laboratoire d’Energies Thermiques Renouvelables (L. E. T. RE) Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso.
²Département de Physique, Université Virtuelle du Burkina Faso, Ouagadougou, Burkina Faso.

In this work, we investigate the effect of the doping rate on the electrical parameters of the different zones of the bifacial polycrystalline silicon solar cell under multispectral illumination. To do this, from our hypothesis, we determined the expression of the continuity equation in the emitter, the base and the overdoped zone p⁺. The photocurrent density, photovoltage and electrical power were studied as a function of the dynamic velocity at the junction for different values of the doping rate. The results obtained by simulation show us that to achieve the best performance of the bifacial PV cell the doping rate of the emitter should be between [10¹⁸ - 10¹⁹ cm⁻³], that of the base between [10¹⁶ - 10¹⁷ cm⁻³] and for the p⁺ zone between [10²⁰ - 10²¹ cm⁻³]. Within these doping ranges, the fill factor, which represents the efficiency of the cell, reaches optimal values.

Doping Rate, Base, Emitter, p⁺ Overdoped Zone, Bifacial Solar Cell

Konate, R. , Zouma, B. , Korgo, B. , Savadogo, A. , Moyenga, C. and Zerbo, I. (2025) Impact of the Doping Rate of Different Zone of the Bifacial PV Cell on the Electrical Parameters. Smart Grid and Renewable Energy, 16, 187-202. doi: 10.4236/sgre.2025.1610011.