Author(s)

Daouda Oubda^*, Alain Diasso, Boureima Ouédraogo, Sayouba Kabré, Marcel Bawindsom Kébré, Soumaïla Ouédraogo, Boureima Traoré, Adama Zongo, Issaka Sankara, Pindéwindé Sawadogo, Amidou Barry, Boureima Sawadogo, François Zougmoré

LA.M.E (Laboratory of Materials and Environment), UFR-SEA (Training and Research Unit in Exact and Applied Sciences), Doctoral School of Sciences and Technologies Joseph KI-ZERBO University, Ouagadougou, Burkina Faso.

In a context marked by the increased use of energy which powers all the activities that make up economic life. The search for short and long term solutions involves improving the performance of renewable energy production systems in general and solar photovoltaic (PV) energy in particular. In the field of solar PV, research is underway to meet these requirements. Therefore, in this paper we present a numerical characterization of chalcopyrite copper-indium-gallium-diselenide thin film solar cells using one dimensional simulation program. Charge carrier recombinations play a major role in CIGS-based solar cells, as a result, the reduction in the lifespan of the charge carriers in the volume of the absorber leads to their recombination and explains the drop in performance. On the other hand, $V_{OC}$ increases with the increase in the gap and $J_{SC}$ decreases. If the energy of the conduction band discontinuity is equal to 0.1 eV, FF and $\eta$ decrease, $J_{SC}$ decreases suddenly for $\Delta E_C=0.4\text{eV}$ . From our study, it appears obvious that as the surface recombination speed increases, the electrical performance of the solar cell decreases. When the interface recombination speed is 10³ cm/s, for $0.3\le \Delta E_C\le 0.6\text{eV}$ , we note a significant decrease in efficiency with a value of 20.9%. The activation energy, denoted $E_a$ , is a phenomenological parameter used to locate the place of predominance of SRH type recombination mechanisms in the CIGS solar cell. The study shows through the $J-V$ characteristic, a significant loss of the $J_{SC}$ by SRH recombination and confirm its domination. The consequences are therefore important, when the lifetime of the electron-hole pairs is at its basic value (${\tau }_{Vb}=2{\mu }_s$ ), for $0.1\le \Delta E_C\le 0.55\text{eV}$ , we note a reduction of 21.6% electrical conversion efficiency. The activation energy of a value of around 1.3 eV greater than the gap of the absorber ($E_g=1.2\text{eV}$ ) attest that SRH recombinations predominate inside the SCR.

Numerical Simulation, Thin Film Solar Cell, Dominate Recombination Mechanism, Shockley-Read-Hall Recombination, Activation Energy

Oubda, D. , Diasso, A. , Ouédraogo, B. , Kabré, S. , Kébré, M. , Ouédraogo, S. , Traoré, B. , Zongo, A. , Sankara, I. , Sawadogo, P. , Barry, A. , Sawadogo, B. and Zougmoré, F. (2025) Numerical Simulation of the Dominate Recombination Mechanism in the Chalcopyrite Cu(In,Ga)Se₂ Thin Film Solar Cell. Open Journal of Applied Sciences, 15, 3663-3672. doi: 10.4236/ojapps.2025.1511238.