Author(s)

Masato Ohmukai

Department of Electrical and Computer Engineering, Akashi College of Technology, Akashi, Hyogo, Japan.

Porous silicon is one of attractive light-emitting materials nowadays. The advantage of silicon-related light emitting materials is an environmental-friendly property and low cost of the material. Light-emitting porous silicon has extensively been studied for more than twenty years, mainly being formed on a p-type silicon wafer. The n-type silicon is also of importance because the pn junction, made of the two types of silicon, is a key structure for electronic devices. This article reports the formation of porous silicon formed on n-type silicon wafers and shows the surface and cross-sectional structures observed by a scanning electron microscope. The formation characteristics of porous silicon on n-type silicon wafers are discussed.

Porous Silicon, n-Type Silicon Wafer, Surface Structure, Scanning Electron Microscope

Ohmukai, M. (2025) Structure of Porous Silicon Formed on n-Type Silicon Wafer. World Journal of Engineering and Technology, 13, 291-298. doi: 10.4236/wjet.2025.132018.