Author(s)

Gajanan Niranjan Chaudhari, Vijay Ramkrishna Chinchamalatpure, Sharada Arvind Ghosh

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The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600^oC. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fab- ricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN with- out presence of elemental gallium and Ga₂O₃ in this film.

Electron Beam Evaporation Technique, GaN Thin Film, C-V, I-V

G. Chaudhari, V. Chinchamalatpure and S. Ghosh, "Structural and Electrical Characterization of GaN Thin Films on Si(100)," American Journal of Analytical Chemistry, Vol. 2 No. 8, 2011, pp. 984-988. doi: 10.4236/ajac.2011.28115.