Author(s)

Neslihan Ayarcı Kuruoğlu, Orhan Özdemir, Kutsal Bozkurt

Department of Physics, Faculty of Science and Letters, Yildiz Technical University, Istanbul, Turkey.

Charge transfer characteristics of the long wavelength semiconductor laser structures, containing quantum dot layers (QDs), were investigated by means of temperature dependent current-voltage and electroluminescence measurements over InAs/InP, and InAs/GaAs based p-i-n structures. In InAs/InP elongated QDs (QDashes) structure, injected carriers were tunneled from the quantum well into QDashes through a thin barrier and subsequently recombined within QDashes. Meanwhile, for InAs/GaAs structure, tunneling kind transport was exhibited in both forward and reverse bias voltage directions. The onset of light took place when the forward bias exceeded 1.3 V (3 V) for InAs/InP (InAs/GaAs) p-i-n structure through electroluminescence measurements. The peak value of emitted laser light for InAs/InP QDashes and InAs/GaAs QDs occurred in 1.55 μm and 1.3 μm, respectively.

Long Wavelength Laser Diode, Quantum Dots, Quantum Dashes, Electroluminescence, Temperature Dependent Currentdensity-Voltage Characteristics

Kuruoğlu, N. , Özdemir, O. and Bozkurt, K. (2017) Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures. Journal of Materials Science and Chemical Engineering, 5, 1-9. doi: 10.4236/msce.2017.59001.