Journal of Materials Science and Chemical Engineering

Volume 5, Issue 8 (August 2017)

ISSN Print: 2327-6045   ISSN Online: 2327-6053

Google-based Impact Factor: 0.72  Citations  

Ohmic Hetero-Junction of n-Type Silicon and Tungsten Trioxide for Visible-Light Sensitive Photocatalyst

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DOI: 10.4236/msce.2017.58004    1,064 Downloads   2,986 Views  Citations

ABSTRACT

Visible light-sensitive photocatalyst was developed by combining n-type silicon (n-Si) and tungsten trioxide (WO3, n-Si/WO3), yielding an ohmic contact in between. In this system, the ohmic contact acted as an electron-and-hole mediator for the transfer of electrons and holes in the conduction band (CB) of WO3 and in the valence band (VB) of n-Si, respectively. Utilizing thus- constructed n-Si/WO3, the decomposition of 2-propanolto CO2 via acetone was achieved under visible light irradiation, by the contribution of holes in the VB of WO3 to decompose 2-propanol and the consumption of electrons in the CB of n-Si to reduce O2. The combination of p-type Si (p-Si) and WO3 (p-Si/ WO3), not the ohmic contact but the rectifying contact, was much less effective, compared to n-Si/WO3.

Share and Cite:

Yoshimizu, M. , Hotori, Y. and Irie, H. (2017) Ohmic Hetero-Junction of n-Type Silicon and Tungsten Trioxide for Visible-Light Sensitive Photocatalyst. Journal of Materials Science and Chemical Engineering, 5, 33-43. doi: 10.4236/msce.2017.58004.

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