Effect of dislocation scattering on electron mobility in GaN - Natural Science

NS > Vol.3 No.9, September 2011

Natural Science

Volume 3, Issue 9 (September 2011)

ISSN Print: 2150-4091 ISSN Online: 2150-4105

Google-based Impact Factor: 0.74 Citations h5-index & Ranking

Effect of dislocation scattering on electron mobility in GaN ()

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DOI: 10.4236/ns.2011.39106 6,264 Downloads 11,928 Views Citations

Author(s)

R. Karthik, Uma Sathyakam P., P. S. Mallick

Affiliation(s)

ABSTRACT

This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.

KEYWORDS

Dislocation Scattering; Electron Mobility; Galium Nitride; Scattering

Share and Cite:

P., R. and Mallick, P. (2011) Effect of dislocation scattering on electron mobility in GaN. Natural Science, 3, 812-815. doi: 10.4236/ns.2011.39106.

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