Author(s)

Ramin Nouri-Bayat, Ali Reza Kashani-Nia

Central Tehran Branch, Islamic Azad University, Tehran, Iran.

Theoretical calculations predict transition frequencies in the terahertz range for the field-effect transistors based on carbon nanotubes, and this shows their suitability for being used in high frequency applications. In this paper, we have designed a field-effect transistor based on carbon nanotube with high transition frequency suitable for ultra-wide band applications. We did this by optimizing nanotube diameter, gate insulator thickness and dielectric constant. As a result, we achieved the transition frequency about 7.45 THz. The environment of open source software FETToy is used to simulate the device. Also a suitable model for calculating the transition frequency is presented.

Carbon Nanotube Field-Effect Transistor (CNTFET), Transition Frequency, Ultra-Wide Band (UWB), FETToy

Nouri-Bayat, R. and Kashani-Nia, A. (2017) Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application. Engineering, 9, 22-35. doi: 10.4236/eng.2017.91003.