Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers - Journal of Materials Science and Chemical Engineering

MSCE > Vol.5 No.1, January 2017

Journal of Materials Science and Chemical Engineering

Volume 5, Issue 1 (January 2017)

ISSN Print: 2327-6045 ISSN Online: 2327-6053

Google-based Impact Factor: 0.72 Citations

Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers ()

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DOI: 10.4236/msce.2017.51006 3,048 Downloads 3,772 Views Citations

Author(s)

Hiroki Nakaie¹, Tetsuji Arai¹, Chiaya Yamamoto¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu²

Affiliation(s)

¹Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Kofu, Japan.
²SST Inc., Yachiyo, Japan.

ABSTRACT

We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.

KEYWORDS

Microwave Plasma Heating, High Hole Mobility, Ge on Si

Share and Cite:

Nakaie, H. , Arai, T. , Yamamoto, C. , Arimoto, K. , Yamanaka, J. , Nakagawa, K. and Takamatsu, T. (2017) Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers. Journal of Materials Science and Chemical Engineering, 5, 42-47. doi: 10.4236/msce.2017.51006.

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