Resistive Switching in Stabilized Zirconia Films Studied by Conductive Atomic Force Microscopy - Journal of Materials Science and Chemical Engineering

MSCE > Vol.5 No.1, January 2017

Journal of Materials Science and Chemical Engineering

Volume 5, Issue 1 (January 2017)

ISSN Print: 2327-6045 ISSN Online: 2327-6053

Google-based Impact Factor: 0.72 Citations

Resistive Switching in Stabilized Zirconia Films Studied by Conductive Atomic Force Microscopy ()

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DOI: 10.4236/msce.2017.51002 3,135 Downloads 4,154 Views Citations

Author(s)

Dmitry Filatov, Dmitry Antonov, Ivan Antonov, Alexander Kasatkin, Oleg Gorshkov

Affiliation(s)

Research and Educational Center for Physics of Solid State Nanostructures, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia.

ABSTRACT

We have applied Conductive Atomic Force Microscopy (CAFM) to study the microscopic mechanism of resistive switching in the ultrathin (3 - 5 nm) yttria stabilized zirconia (YSZ) films. Using CAFM, we were able to trace the growth of the individual conductive filaments, which are considered now to be responsible for the resistive switching effect in the transition metal oxides. The growth of the filaments has been proven to be initiated by the defects in the film material including the ones, which are the concentrators of the electric field, in particular, by the roughness (hillocks) of the film/substrate interface. The electron transport via individual filaments has been studied. Besides the butterfly-type hysteresis in the current-voltage (I-V) curves of the probe- to-sample contact typical for the bipolar resistive switching, we have observed the I-V curves with resonant peaks attributed to the resonant electron tunneling via the localized electron states in the filaments.

KEYWORDS

Resistive Switching, Yttria Stabilized Zirconia, Conductive Atomic Force Microscopy

Share and Cite:

Filatov, D. , Antonov, D. , Antonov, I. , Kasatkin, A. and Gorshkov, O. (2017) Resistive Switching in Stabilized Zirconia Films Studied by Conductive Atomic Force Microscopy. Journal of Materials Science and Chemical Engineering, 5, 8-14. doi: 10.4236/msce.2017.51002.

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