Author(s)

Palanichamy Vimala, L. Vidyashree

Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, Bangalore, India.

Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.

HEMT, GaN/AlGaN, 2DEG, Drain Current, Noise Power Spectrum Density

Vimala, P. and Vidyashree, L. (2016) Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT. Journal of Applied Mathematics and Physics, 4, 1906-1915. doi: 10.4236/jamp.2016.410193.