Author(s)

Larbi F., Belfedal Abdelkader, Sib J. D., Bouizem Y., Chahed L., Amaral A.

.

Gap states in amorphous hydrogenated silicon (a-Si:H) doped and microcrystalline silicon doped n and p were examined by analysis of subgap absorption spectra obtained by the Constant Photocurrent Method (CPM) and the Photothermal Deflection Spectroscopy (PDS). Assuming a Gaussian distribution of defect states in the gap, broad distribution of states was found in a-Si:H and doped a-Si:H. A dependence of the defect concentration on Fermi energy was detected and analysed by thermodynamic model of defect formation in a-Si:H.

Defects Formation, Doping, Microcrystalline Silicon, Thermodynamic Model of Defect, Optical Properties and Measurements

L. F., B. Abdelkader, S. D., B. Y., C. L. and A. A., "Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon," Journal of Modern Physics, Vol. 2 No. 9, 2011, pp. 1030-1036. doi: 10.4236/jmp.2011.29124.