An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode - Optics and Photonics Journal

OPJ > Vol.6 No.8, August 2016

Optics and Photonics Journal

Volume 6, Issue 8 (August 2016)

ISSN Print: 2160-8881 ISSN Online: 2160-889X

Google-based Impact Factor: 0.76 Citations h5-index & Ranking

An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode ()

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DOI: 10.4236/opj.2016.68B013 1,925 Downloads 6,041 Views Citations

Author(s)

Yiru Liao, Jianjun Li^*, Guoxin Mi, Haikuo Wang, Yuancheng Wang, Jun Deng, Jun Han

Affiliation(s)

Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China.

ABSTRACT

This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15 - 333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15 - 333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.

KEYWORDS

940 nm Semiconductor Laser, Threshold Current, Characteristic Temperature

Share and Cite:

Liao, Y. , Li, J. , Mi, G. , Wang, H. , Wang, Y. , Deng, J. and Han, J. (2016) An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode. Optics and Photonics Journal, 6, 75-82. doi: 10.4236/opj.2016.68B013.

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