Author(s)

Elyor Bahriddinovich Saitov

Department of Electronics and Microelectronics, Tashkent State Technical University, Tashkent, Uzbekistan.

The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.

Single Crystalline Silicon, Nanoscale Structures, Self-Organization of Clusters of Impurity Atoms, Ni Clusters

Saitov, E. (2016) Study of Quantitative and Qualitative Characteristics of Nickel Clusters and Semiconductor Structures. Journal of Materials Science and Chemical Engineering, 4, 30-35. doi: 10.4236/msce.2016.45005.