The Electrical Properties of Al/Methylene-Blue/n-Si/Au Schottky Diodes - Journal of Modern Physics

JMP > Vol.7 No.1, January 2016

Journal of Modern Physics

Volume 7, Issue 1 (January 2016)

ISSN Print: 2153-1196 ISSN Online: 2153-120X

Google-based Impact Factor: 0.86 Citations h5-index & Ranking

The Electrical Properties of Al/Methylene-Blue/n-Si/Au Schottky Diodes ()

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DOI: 10.4236/jmp.2016.71001 5,926 Downloads 7,437 Views Citations

Author(s)

B. Bati

Affiliation(s)

Department of Physics, Faculty of Science, University of Yüzüncüyil, Van, Turkey.

ABSTRACT

We studied the electrical characteristics of Al/methylene-blue/n-Si/Au Schottky diodes such as current-voltage, conductance-capacitance-voltage, and conductance-capacitance-frequency. We plotted rectification ratio vs. voltage (RR-V) of the diode. From I-V plots of the diodes, saturation current (I_o), and ideality factor (n) were calculated. Barrier height (eΦ_B) and series resistance (R_S) were calculated with Norde functions. The results show that in the Al/methylene-blue/n-Si/Au diode, the methylene-blue layer has a significant impact on electrical properties such as series resistance, barrier height, ideality factor, conductance, rectification ratio, and capacitance.

KEYWORDS

Organic Schottky Diodes, Schottky Barrier Diodes, Methylene-Blue Layer

Share and Cite:

Bati, B. (2016) The Electrical Properties of Al/Methylene-Blue/n-Si/Au Schottky Diodes. Journal of Modern Physics, 7, 1-6. doi: 10.4236/jmp.2016.71001.

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