Active and Capacitive Conductance of the Diode in a Strong Microwave Field - Journal of Applied Mathematics and Physics

JAMP > Vol.3 No.12, December 2015

Journal of Applied Mathematics and Physics

Volume 3, Issue 12 (December 2015)

ISSN Print: 2327-4352 ISSN Online: 2327-4379

Google-based Impact Factor: 0.70 Citations

Active and Capacitive Conductance of the Diode in a Strong Microwave Field ()

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Download as PDF (Size: 236KB) PP. 1684-1687

DOI: 10.4236/jamp.2015.312194 2,069 Downloads 2,634 Views Citations

Author(s)

Muhammadjon Gulomkodirovich Dadamirzaev

Affiliation(s)

Namangan Engineering Pedagogical Institute, Namangan, Uzbekistan.

ABSTRACT

It is shown that the mean value of the capacitive current arising in the p-n-junction in a microwave field is zero, and the average value of the active current independently of the current value is different from zero and is equal to the current generated by the diode.

KEYWORDS

Hot Electrons, The Microwave Field, The Active and Capacitive Conductivity, Fault Current, p-n-Junction

Share and Cite:

Dadamirzaev, M. (2015) Active and Capacitive Conductance of the Diode in a Strong Microwave Field. Journal of Applied Mathematics and Physics, 3, 1684-1687. doi: 10.4236/jamp.2015.312194.

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