Author(s)

Mohammad Reza Farjadian, Hassan Kaatuzian, Iman Taghavi

Photonics Research Laboratory (PRL), Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran.

In this paper we investigate the effects of base width variation on performance of long wavelength transistor laser. In our structure with increasing the base width, the cut off frequency increases until 367 nm with 24.5 GHz and then abruptly fall. In 100 nm base width, we have 17.5 GHz cut off frequency, and overall ac performances become optimized, although, other parameters like optical losses and threshold current density are not optimized.

Transistor Laser; Quantum Well; Long Wavelength; Optical Confinement Factor

M. Reza Farjadian, H. Kaatuzian and I. Taghavi, "Base Width Variations and its Effects on Frequency Response of Double Hetero-structure Long Wavelength Transistor Laser," Optics and Photonics Journal, Vol. 3 No. 2B, 2013, pp. 248-251. doi: 10.4236/opj.2013.32B058.