World Journal of Condensed Matter Physics

Volume 3, Issue 2 (May 2013)

ISSN Print: 2160-6919   ISSN Online: 2160-6927

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The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals

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DOI: 10.4236/wjcmp.2013.32019    4,089 Downloads   6,357 Views  Citations

ABSTRACT

Silicon nanocrystals embedded in silicon nitride films were irradiated with Si-ions at 8 MeV in order to modify their optical response. The samples were characterized by means of Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis, High-Resolution Transmission Electronic Microscopy and Photoluminescence analysis. It was found a blue-shift in the photoluminescence emission from the as-grown films after they were irradiated with high energetic silicon ions. According to the quantum confinement theory, this fact is related to a decrease in size of the silicon nanocrystals, which means that a higher silicon fluence irradiation is related with a diminishing in silicon nanocrystal size.

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A. López-Suárez, "The Effect of the MeV Si-Ion Irradiation on the Photoluminescence of Silicon Nanocrystals," World Journal of Condensed Matter Physics, Vol. 3 No. 2, 2013, pp. 119-124. doi: 10.4236/wjcmp.2013.32019.

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[1] Characteristics of silicon nanocrystals obtained by thermal annealing of amorphous low pressure chemical vapor deposition SiNx (x= 0.12) thin film
Proceedings of The first International Conference on Nanoelectronics, Communications and Renewable Energy , 2013

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