Author(s)

Masato Kanayama, Takeo Oku, Tsuyoshi Akiyama, Youichi Kanamori, Satoshi Seo, Jun Takami, Yoshimasa Ohnishi, Yoshikazu Ohtani, Mikio Murozono

Clean Venture 21 Co. Ltd., Kyoto, Japan.
Department of Materials Science, The University of Shiga Prefecture, Shiga, Japan.

Structure and properties of anti-reflection thin films of spherical silicon solar cells were investigated and discussed. Conversion efficiencies of spherical Si solar cells coated with F-doped SnO₂ anti-reflection films were improved by annealing. Optical absorption and fluorescence of the solar cells increased after annealing. Lattice constants of F-doped SnO₂ anti-reflection layers, which were investigated by X-ray diffraction, decreased after annealing. A mechanism of atomic diffusion of F in SnO₂ was discussed. The present work indicated a guideline for spherical silicon solar cells with higher efficiencies.

Solar Cells; Spherical Silicon; Anti-Reflection Film; FTO; SnO2

M. Kanayama, T. Oku, T. Akiyama, Y. Kanamori, S. Seo, J. Takami, Y. Ohnishi, Y. Ohtani and M. Murozono, "Microstructure Analysis and Properties of Anti-Reflection Thin Films for Spherical Silicon Solar Cells," Energy and Power Engineering, Vol. 5 No. 2A, 2013, pp. 18-22. doi: 10.4236/epe.2013.52A003.