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[1]
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МОС-гидридная эпитаксия в технологии материалов фотоники и электроники
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2022 |
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[2]
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Structural and thermal properties of InSb: Mn with MnSb clusters
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Laprea… - Journal of Physics …,
2022 |
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[3]
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Optimization, Fabrication, and Characterization of Dual-Band InGaAs nBn Photodetectors
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2022 |
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[4]
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Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
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2021 |
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[5]
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Two-plasmon spontaneous emission from a nonlocal epsilon-near-zero material
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2021 |
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[6]
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Phonon frequencies, mechanical and optoelectronic properties for InP x As y Sb …
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2021 |
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[7]
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Phonon frequencies, mechanical and optoelectronic properties for InPxAsySb1-xy/InAs alloys under the influence of pressure.
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Applied Physics A …,
2021 |
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[8]
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Review on GaAsSb Nanowire Potentials for Future 1D Heterostructures: Properties and Applications
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2021 |
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[9]
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Hybrid schemes for excitation of collective resonances with surface plasmon polaritons in arrays of quantum dots in the proximity of graphene
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2020 |
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[10]
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BARRIER ENGINEERING FOR HIGH-PERFORMANCE nBn INFRARED PHOTODETECTORS
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2020 |
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[11]
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Raman peak shifts by applied magnetic field in InSb/Al x In1− x Sb superlattices
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2020 |
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[12]
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Study of High-k Dielectrics and their Interfaces on Semiconductors for Device Applications
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2019 |
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[13]
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The detached phenomenon and the fundamental science behind: The novel vertical directional solidification growth of the detached crystals by slow freezing
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2019 |
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[14]
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Recent advances in III-Sb nanowires: from synthesis to applications
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2019 |
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[15]
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Threshold Current Density of Al0. 1Ga0. 9N/GaN Triple Quantum Well Laser
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2019 |
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[16]
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Introduction to Metalorganic Vapor Phase Epitaxy
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2019 |
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[17]
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Structural and elastic behavior of aluminum pnictides with temperature effect
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2019 |
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[18]
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Study of effect of temperature on phase transition pressure of GaAs and GaSb
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IOP Conference Series: Materials Science and Engineering,
2018 |
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[19]
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Characterization of N-type and P-type Aluminum Antimonides on Si substrates for room-temperature optoelectronic devices
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Materials Science in Semiconductor Processing,
2018 |
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[20]
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Thermoelectric Properties of Nanostructured Material Based on Si and GaSb
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Defect and Diffusion Forum,
2018 |
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[21]
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Detached Sb-Based Crystal Growth by VDS: Fabrication and Characterization of the Schottky and MOS Devices on InSb VDS-Substrate Operate At 300k
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IOSR Journal of Electronics and Communication Engineering ,
2018 |
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[22]
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Etude et simulation des performances de transport électronique dans les structures MESFET et HEMT à base de GaInSb/GaAs
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2018 |
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[23]
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Wavelength-selective mid-infrared metamaterial absorbers with multiple tungsten cross resonators
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Optics Express,
2018 |
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[24]
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Detached Crystal Growth by VDS: Fabrication and Characterization of the PN Junction, Photo and Thermo Device on the Sb-Based Substrate to Operate at the Ambient Temperature
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IOSR Journal of Electronics and Communication Engineering,
2017 |
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[25]
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Study and simulation of electron transport in Ga0.5ln0.5Sb based on Monte Carlo method
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Semiconductors,
2017 |
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[26]
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Mid-infrared Kerr lens mode-locked chromium-doped chalcogenide lasers
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2017 |
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[27]
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Realistic Full Wave Modeling of Focal Plane Array Pixels
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Applied Computational Electromagnetics Society Journal,
2017 |
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[28]
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Simulations of realistic multifunctional nanoantenna enabled detectors
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2017 |
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[29]
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Detached Crystal Growth by VDS: Fabrication and Characterization of the P-N Junction, Photo and Thermo Device on the Sb-Based Substrate to Operate at the Ambient Temperature
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IOSR Journal of Electronics and Communication Engineering,
2017 |
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[30]
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使用有機化學氣相沉積系統以介面差排陣列磊晶成長三五族銻化物材料對互補式金屬氧化物半導體之應用
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2017 |
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[31]
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на соискание ученой степени МАГИСТРА
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2017 |
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[32]
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Study and simulation of electron transport in Ga0. 5In0. 5Sb based on Monte Carlo method
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Физика и техника …,
2017 |
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[33]
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A INFLUÊNCIA DO TELÚRIO NAS PROPRIEDADES ELÉTRICAS E ÓPTICAS DOS COMPOSTOS SEMICONDUTORES Ga1-xInxSb CRESCIDOS PELO …
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2016 |
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[34]
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Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors
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Optics Express,
2016 |
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[35]
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Effects of Te additions and stirring in the In segregation in Ga1-xInxSb alloys
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2016 |
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[36]
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Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
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AIP Conference Proceedings,
2016 |
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[37]
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Localization of the interband transitions in the bulk of the Brillouin zone of III–V compound crystals
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Semiconductors,
2016 |
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[38]
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Локализация полос межзонных переходов в объеме зоны Бриллюэна кристаллов группы III− V
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Физика и техника полупроводников,
2016 |
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[39]
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Study of In distribution on GaInSb: Al crystals by ion beam techniques
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Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms,
2015 |
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[40]
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Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
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Applied Physics Letters,
2015 |
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[41]
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Room temperature GaAsSb single nanowire infrared photodetectors
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Nanotechnology,
2015 |
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[42]
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Fabrication of Individual Carbon Nanotubes and Their Arrays in a Transmission Electron Microscope
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Carbon,
2015 |
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[43]
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PHEMT as a circuit element for high impedance nanopower amplifiers for ultra-low temperatures application
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Cryogenics,
2015 |
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[44]
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The heat exchange Intensification in Nano-homo junction semiconductor materials
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Engineering and Technology Journal,
2015 |
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[45]
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Extra-low power consumption amplifier based on HEMT in unsaturated mode for use at subkelvin ambient temperatures
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Cryogenics, Elsevier,
2014 |
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[46]
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First principle study of the physical properties of semiconducting binary antimonide compounds under hydrostatic pressures
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Materials Science in Semiconductor Processing,
2014 |
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[47]
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PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE …
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2014 |
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[48]
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Comparative study of subthreshold characteristics of different antimonide-based and nitride-based dual material gate (DMG) HEMTs
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Semiconductor Electronics (ICSE), 2014 IEEE International Conference on,
2014 |
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[49]
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Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy
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AIP Advances,
2014 |
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[50]
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Effects of physical parameters on subthreshold characteristics of nitride and antimonide-based double material gate (DMG) HEMTs
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Electrical and Computer Engineering (ICECE), 2014 International Conference on,
2014 |
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[51]
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Гетероструктурные полевые транзисторы как активные элементы приемных устройств для особо жестких условий эксплуатации
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РАДИОФИЗИКА И РАДИОАСТРОНОМИЯ,
2014 |
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[52]
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Ab-initio study of the structural, electronic and optical properties of BSb (110) and (100) surfaces
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Surface Science, Elsevier,
2014 |
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[53]
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A INFLUÊNCIA DO TELÚRIO NO COMPO RTAMENTO SEGREGACIONAL DO ÍNDIO EM COMPOSTOS SEMICONDUTORES Ga 1 - x In x Sb CRESCIDOS PELO MÉTODO BRIDGMAN VERTICAL
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2014 |
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[54]
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A INFLUÊNCIA DO TELÚRIO NO COMPORTAMENTO SEGREGACIONAL DO ÍNDIO EM COMPOSTOS SEMICONDUTORES Ga1-xInxSb CRESCIDOS
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2014 |
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[55]
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Design of extra-low power consumption readout amplifiers for terahertz matrix receivers, bolometer arrays and qubits below 1 K
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Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW), 2013 International Kharkov Symposium on. IEEE,,
2013 |
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[56]
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Raman spectroscopy of self-catalyzed GaAs1− xSbx nanowires grown on silicon
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Nanotechnology,
2013 |
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[57]
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Novel Terahertz Emitters and Detectors: InGaAs Slot Diodes and InAs Self-Switching Diodes
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NULL
2013 |
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[58]
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Characterization of Suspended Single-Walled Carbon Nanotube Film Formed by AC Dielectrophoresis for Infrared Sensing Application
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Sensor Letters,
2013 |
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[59]
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Evaluation of the indium gallium nitride/silicon broken-gap heterojunction and its potential application for solar cells
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ProQuest Dissertations Publishing,
2013 |
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[60]
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Superposition of states in flux qubits with a Josephson junction of the ScS type
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AIP Conference Proceedings,
2012 |
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[61]
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Суперпозиция состояний в потоковых кубитах с джозефсоновским контак
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?Low Temperature Physics ,
2012 |
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[62]
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Суперпозиция состояний в потоковых кубитах с джозефсоновским контактом ScS-типа (Обзор)
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2012 |
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[63]
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Superposition of states in flux qubits with a Josephson junction of the ScS type (Review Article)
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?Low Temperature Physics ,
2012 |
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[64]
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Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
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NULL
2012 |
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[65]
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57Fe Mössbauer Studies of 57Mn* Implanted III-V Semiconductors InP and InAs
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Dissertation,
2011 |
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[66]
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57 Fe Mössbauer studies of 57 Mn* implanted III-V semiconductors InP and InAs.
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2011 |
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[67]
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ФОРМИРОВАНИЕ И ТЕРМОЭЛЕКТРИЧЕСКИЕ СВОЙСТВА КРЕМНИЕВЫХ ГЕТЕРОСТРУКТУР СО ВСТРОЕННЫМИ НАНОКРИСТАЛЛАМИ …
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[68]
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A INFLUÊNCIA DO TELÚRIO NO COMPORTAMENTO SEGREGACIONAL DO ÍNDIO EM COMPOSTOS SEMICONDUTORES Ga1-xInxSb CRESCIDOS …
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CC Klein, GBV Oliveira, BA Dedavid
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