Author(s)

Besma Moumni, Abdelkadr Ben Jaballah, Selma Aouida, Brahim Bessaïs

1Photovoltaic Laboratory, Research and Technology Centre of Energy (CRTEn), Borj Cédria Technopark, Hammam Lif, Tunisia.
Photovoltaic Laboratory, Research and Technology Centre of Energy (CRTEn), Borj Cédria Technopark, Hammam Lif, Tunisia.

The thermal behaviors of oxygen-related complexes in boron doped Czochralski Silicon (Cz-Si) wafers at 450°C and 800°C were investigated using Fourier transform infrared spectroscopy (FTIR) and Hall mobility measurements. Activation of thermal donors (TDs) at 450°C leads to a decrease of both mobility and majority carrier concentration using the four point probes configuration of Van Der Pauw. It was found that annealing at 450°C would possibly affect the electronic properties of the Si wafers via the formation of interstitial dioxygen defects (IO_2i), which exhibit an IR absorption band positioned at 545 cm^–1. A strengthening of the IR bands peaking at around 1595 cm^–1, 1667 cm^–1, 1720 cm^–1 and 1765 cm^–1 occurs at 450°C, while they disappear at 800°C. At high temperatures, the precipitation of interstitial oxygen becomes predominant over all other oxygen-related reactions. The dynamic of oxygen-thermal donor generation-annihilation in Cz-Si involving the formation of small oxygen clusters is discussed.

Cz-Silicon; Infrared Spectroscopy; Interstitial Oxygen; Thermal Donors; Oxygen Vacancies; Oxygen Dimers; Oxygen Aggregation

B. Moumni, A. Jaballah, S. Aouida and B. Bessaïs, "Dimers as Fast Diffusing Species for the Aggregation of Oxygen in Boron-Doped Czochralski Silicon: Formation of New Thermal Donors," World Journal of Condensed Matter Physics, Vol. 2 No. 3, 2012, pp. 165-170. doi: 10.4236/wjcmp.2012.23027.