Growth and Electrical Properties of Doped ZnO by Electrochemical Deposition - New Journal of Glass and Ceramics

NJGC > Vol.2 No.1, January 2012

New Journal of Glass and Ceramics

Volume 2, Issue 1 (January 2012)

ISSN Print: 2161-7554 ISSN Online: 2161-7562

Google-based Impact Factor: 0.73 Citations

Growth and Electrical Properties of Doped ZnO by Electrochemical Deposition ()

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DOI: 10.4236/njgc.2012.21003 6,974 Downloads 12,932 Views Citations

Author(s)

Dewei Chu, Sean Li

Affiliation(s)

ABSTRACT

In this work, pure and different metal ions doped ZnO thin films were obtained by a facile electrochemical deposition process. Different morphologies of ZnO, such as nanoplates, nanoparticles, as well as dense film can be obtained by doping Cu²⁺, In³⁺, and Al³⁺, respectively. Besides, the electrical properties of ZnO were also dependent on the doping ions. In this work, only pure ZnO shows resistive switching characteristics, indicating that the defects in ZnO is a key role in inducing resistive switching behaviour.

KEYWORDS

ZnO Electrochemcial Deposition

Share and Cite:

D. Chu and S. Li, "Growth and Electrical Properties of Doped ZnO by Electrochemical Deposition," New Journal of Glass and Ceramics, Vol. 2 No. 1, 2012, pp. 13-16. doi: 10.4236/njgc.2012.21003.

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