Author(s)

Nosirjon Khaydarovich Yuldashev, Dilkhumor Tolibjonovna Mamadieva, Valijon Tulqinovich Mirzaev, Dadahon Sherquzievich Xidirov

Department of Physics, Ferghana Polytechnic Institute, Ferghana, Uzbekistan.

The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe_xS_1-x solid solution obtained by the method of thermal evaporation in a vacuum has been investigated. It is shown that at low illumination intensities L < 2 lx, the mobility μ of electrons increases with a power law μ ~ L^γ, first with the exponent γ > 1, then with γ ≈ 0.5, and their concentration n almost does not change. Starting from the intensity L > 12 - 15 lx, the electron concentration increases strongly n ~ L^β from β ≈ 3.0, and the parameters n and μ reach relatively high values ~(10¹⁵ - 10¹⁶) sm^-3 and ~(150 - 200) sm²/V·s, however further, at L > 50 lx, a weak dependence of n(L) and μ(L) with β, γ < 1.0 is found. The obtained experimental results are interpreted on the basis of a model of a semiconductor film with intergranular potential barriers when the concentration and barrier mechanisms of photoconductivity operate simultaneously.

Solid Solutions CdSe_xS_1-x, Polycrystalline Thin Film, Photoconductivity, Ther-mal Treatment, Lux-Ampere Characteristic, Photocurrent, Light Intensity

Yuldashev, N. , Mamadieva, D. , Mirzaev, V. and Xidirov, D. (2022) Effect of Heat Treatment Conditions on Photo sensitivity of CdSe_xS_1-x Polycrystalline Films. Journal of Applied Mathematics and Physics, 10, 3208-3217. doi: 10.4236/jamp.2022.1010213.