Author(s)

Daouda Oubda^1*, Marcel Bawindsom Kébré¹, Soumaïla Ouédraogo¹, Alain Diasso¹, François Zougmoré¹, Zacharie Koalga¹, Frédéric Ouattara^1,2

¹Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA, Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso.
²Laboratoire de Recherche en Energétique et Météorologie de l’Espace (LA.R.E.M.E), Université Norbert Zongo, Koudougou, Burkina Faso.

In this study, the authors investigated the performance of different buffer layers through the electrical parameters such as J_sc, V_oc, QE and η of the quaternary system Cu(In,Ga)Se₂ solar cells. The performance of Cu(In,Ga)Se₂solar cells has been modeled and numerically simulated by using the SCAPS- 1D device simulation tool. The cells with a ZnSe, Zn(O,S) and (Zn,Mg)O buffer layers were compared with the reference CdS buffer layer. The investigation of ZnSe, Zn(O, S) and (Zn,Mg)O-based cells to substitute the traditional CdS in the future shows that the ZnSe-buffer layer is a potential material to replace CdS, which revealed the best efficiency of 20.76%, the other electrical parameters are: J_SC = 34.6 mA/cm², V_OC = 0.76 V and FF = 79.6%. The losses as a function of the temperature are estimated at 0.1%/K, among all kinds of buffer layers studied. We have also shown that the use of a high band-gap buffer layer is necessary to obtain a better short-circuit current density J_SC. From our results, we note that the chalcogenide solar cells with Zn-based alternative buffer layer have almost the same stability thatthe traditional CdS buffer layer solar cells have.

Thin Film Solar Cells, CIGS Absorber, Alternative Buffer Layers, SCAPS-1D, Electrical Parameters

Oubda, D. , Kébré, M. , Ouédraogo, S. , Diasso, A. , Zougmoré, F. , Koalga, Z. and Ouattara, F. (2022) High Performance for Cu(In,Ga)Se₂ Quaternary System-Based Solar Cells with Alternative Buffer Layers. Advances in Materials Physics and Chemistry, 12, 207-219. doi: 10.4236/ampc.2022.129015.