Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs ()
ABSTRACT
DG-MOSFETs are the most widely explored device
architectures for nano-scale CMOS circuit design in
sub-50 nm due to the improved subthreshold slope and the reduced leakage power compared to bulk MOSFETs. In thin-film
(tsi < 10 nm) DG-MOS
structures, charge carriers are affected by tsi- induced
quantum confinement along with the confinement caused by a very
high electric field at the interface. Therefore, quantum confinement effects on
the device characteristics are also quite important and it needs to be incorporated along with short channel effects for
nano-scale circuit design. In this paper, we analyzed a DG-MOSFET structure at the 20 nm technology node incorporating quantum confinement effects and various short channel
effects. The effect of physical parameter variations on performance
characteristics of the device such as
threshold voltage, subthreshold slope, ION - IOFF ratio, DIBL, etc.
has been investigated and plotted through extensive TCAD simulations. The
physical parameters considered in this paper are operating temperature (Top), channel doping
concentration (Nc), gate
oxide thickness (tox) and
Silicon film thickness (tsi).
It was observed that quantum confinement of charge carriers significantly affected the performance characteristics (mostly the subthreshold characteristics) of the
device and therefore, it cannot be ignored in the subthreshold region-based circuit design like in many previous research works. The ATLASTM device
simulator has been used in this paper to perform simulation and parameter extraction. The TCAD analysis
presented in the manuscript can be incorporated
for device modeling and device matching. It can be used to illustrate exact device behavior and for proper
device control.
Share and Cite:
Swami, Y. and Rai, S. (2021) Physical Parameter Variation Analysis on the Performance Characteristics of Nano DG-MOSFETs.
Circuits and Systems,
12, 39-53. doi:
10.4236/cs.2021.124004.